"GPX" has two types: HS-C series for Cu and HS-T series for barrier metals. The polishing performance is controllable for various processes and devices.
Advanced semiconductor devices with high performance are
required to have multi-level layers, fine patterns to obtain high speed
transmission. CMP process is indespensable to have well-planarized interlayer
dielectric or metals in LSI and accomplish the above requirments.
Features
High removal rate at low down force polishing.
Low dishing and erosion.
Removal selectivity of Cu, TaN, and oxide is tunable.
Characteristics (Typical Values)
Item
Unit
HS-H635
HS-T605
HS-T815
Use
–
for Cu
for TaN
Features
–
Abrasive free like
High removal rate @ low down force
